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MG300Q2YS60A
MITSUBISHI IGBT Module
MG300Q2YS60A(1200V/300A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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MG300Q2YS60A
Package Dimensions
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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MG300Q2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 1200 20 300 600 300 A 600 2800 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V A
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 300 A VCC = 600 V, IC = 300 A VGE = 15 V, RG = 6.8 (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 300 mA VGE = 15 V, IC = 300 A Tj = 25C Tj = 125C Min 6.0 0.10 Typ. 7.0 2.4 21000 2.1 Max +3/-4 100 1.0 8.0 2.8 3.2 1.00 2.00 0.50 0.50 2.6 V s pF Unit mA nA mA V V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 600 V, VGE = 15 V Min 360 100 Typ. Max 125 8 Unit A C s
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MG300Q2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.044 0.068 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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MG300Q2YS60A
Remark

Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = * 14.8 V < VGE < 17.0 V = = * RG > 6.8 = * Tj < 125C =

To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.

Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 14.8 6.8 Typ. 600 15 Max 750 17 20 Unit V V kHz
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MG300Q2YS60A
IC - VCE
600 Common emitter Tj = 25C 500 15 V 500 600 Common emitter Tj = 125C
IC - VCE
VGE = 20 V 15 V 12 V 400 10 V 300
IC (A)
400
Collector current
300 10 V 200
Collector current
IC (A)
VGE = 20 V
12 V
200
9V
100
9V 8V
100
8V
0 0
1
2
3
4
5
0 0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6 IC = 600 A 4 300 A 2 150 A 0 0
4
IC = 600 A 300 A
2 150 A 0 0 5 10 15 20
5
10
15
20
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
VCE - VGE
12 Common emitter 600 Common emitter VCE = 5 V 500 Tj = -40C 10
IC - VGE
(V)
8
IC (A) Collector current
VCE
400
Collector-emitter voltage
6
300
4 300 A 2
IC = 600 A
200
25C Tj = 125C
100 150 A
-40C
0 0
5
10
15
20
0 0
4
8
12
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
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MG300Q2YS60A
IF - VF
600 Common cathode 1000 VGE = 0 V 500 RL = 2 Tj = 25C
VCE, VGE - QG
20 Common emitter
(V)
Forward current IF
400
Collector-emitter voltage
VCE
800
16
600 V 400 200 V VCE = 0 V 200 4 8
300 125C 200 Tj = 25C -40C
100
0 0
1
2
3
4
5
0 0
500
1000
1500
2000
0 2500
Forward voltage
VF (V)
Charge
QG
(nC)
SW time - RG
10000 1000 Common emitter VCC = 600 V toff IC = 300 A VGE = 15 V
Eon, Eoff - RG
(mJ)
Tj = 25C Tj = 125C
(ns)
1000
SW time
td (on) tr 100 Common emitter VCC = 600 V IC = 300 A 10 0 VGE = 15 V 5 10 Tj = 25C Tj = 125C 15 20 25 tf
Eon , Eoff
td (off)
ton
Eon 100
SW loss
Eoff
10 0
5
10
15
20
25
Gate resistance
RG
()
Gate resistance
RG
()
SW time - IC
10000 100
Eon, Eoff - IC
toff td (off) ton
(ns)
1000
(mJ)
Eon, Eoff
Eoff Eon
SW time
10
100 Common emitter tr VCC = 600 V RG = 6.8 VGE = 15 V 50 100 150 200 Tj = 25C Tj = 125C 250 300
SW loss
tf
td (on)
Common emitter VCC = 600 V RG = 6.8 VGE = 15 V 1 0 50 100 150 200 Tj = 25C Tj = 125C 250 300
10 0
Collector current IC (A)
Collector current IC (A)
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Gate-emitter voltage
600
400 V
12
VGE (V)
(A)
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MG300Q2YS60A
Irr, trr - IF
1000 100
Edsw - IF
Edsw (mJ)
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
trr
10
100 Irr
Reverse recovery loss
1 Common cathode VCC = 600 V RG = 6.8 VGE = 15 V 0.1 0 Tj = 25C Tj = 125C 200 250 300
Common cathode VCC = 600 V RG = 6.8 VGE = 15 V 10 0 50 100 150 200 Tj = 25C Tj = 125C 250 300
50
100
150
Forward current
IF (A)
Forward current
IF (A)
C - VCE
100000 Cies 1000
Safe-operating area
IC max (pulsed)* IC max (continuous) 100 s
IC (A)
(pF)
10000
50 s 100 *: Single nonrepetitive pulse Tc = 25C Curves must 10 be derated linearly with increase in temperature. 3 1 10
C
Coes 1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres
Collector current
Capacitance
1 ms DC operation
100
1000
10000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
1000
Rth - tw
1
IC (A)
Tc = 25C 100
Rth (j-c) (C/W)
Collector current
0.1
Diode stage
10 Tj < 125C = RG = 6.8 VGE = 15 V 1 0 400 800 1200
Transistor stage 0.01
0.001 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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